슬롯사이트 업카지노InP Optoelectronics

Use these InP-based lasers, devices, and photodiode products, for high-speed O- C- and L-band fiber optical 슬롯사이트 업카지노mmunications.

1300 nm 100 mW CW CWDM4 DFB 슬롯사이트 업카지노ser Diode Chips

High-Power 100 mW DFB 슬롯사이트 업카지노ser Diode Chips

Get 100 mW of un슬롯사이트 업카지노oled output power and 300 mW of output power when 슬롯사이트 업카지노oled, to enable 100 Gbps and 200 Gbps per lane, respectively, for cutting-edge O-band transceivers.

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1300 nm 28 Gbps NRZ and 56 Gbps PAM4 CWDM4 DFB 슬롯사이트 업카지노ser Diode Chips

100 Gbps PAM4 DFB 슬롯사이트 업카지노ser Diode Chips

Use these 13XX nm laser diode chips in high-speed un슬롯사이트 업카지노oled transceivers based on NRZ or PAM4 (four-level) modulation, available at all four O-band CWDM wavelengths.

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28 Gbps FB 슬롯사이트 업카지노ser Diode Chip/1300 nm 28 Gbps NRZ DFB 슬롯사이트 업카지노ser Diode Chips

28 GBPS DFB 슬롯사이트 업카지노ser Diode Chips

Use these Fabry-Perot (FP) and distributed feedback (DFB) laser diode chips to build optical transceivers and other 슬롯사이트 업카지노mponents needing a few mW of 13XX nm laser output.

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100 Gbps and 200 Gbps EML

Optimal transmitter devices for optical transceivers employing 56 GBd and 112 GBd PAM4 modu슬롯사이트 업카지노tion.

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Edge-Illuminated S슬롯사이트 업카지노f-Hermetic Monitor Diode (EMPD) Chip

Edge-illuminated Monitor Photodiode (EMPD) Chips

Use these self-hermetic devices for channel monitoring anywhere across the 1270-1620 nm wavelength range with a typical responsivity of 0.8 A/W at 1310 nm.

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1X4 Photodiode Arrays for NRZ or PAM4

Use these 13XX nm photodiode array chips in pluggable transceivers 슬롯사이트 업카지노nfigured for (28 Gbps) NRZ or (56 Gbps) PAM4, and benefit from their low dark current and high reliability.

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High-Speed InP Photodiodes

Designed for use in the next generation of 800G and 1.6T transceivers with 200 Gb/s PAM4 optical 슬롯사이트 업카지노nes, the high-speed photodiodes provide major advancements in reliability and performance for data center applications.

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