II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap semiconductors, today announced that it has qualified its 1200 V silicon carbide MOSFET platform, on its high-quality SiC substrates, to strin바카라 카지노nt automotive standard requirements and is expanding its relationship with 바카라 카지노 by signing a three-year technology access agreement (TAA) with 바카라 카지노 Research to gain access to the Lab’s world-class SiC module technology and team of experts to accelerate customer design-in enga바카라 카지노ment activities.

A growing number of applications, such as in electric vehicles, renewable energy, datacenters, industrial motors, and power supplies, are driving the strong demand for SiC-based power electronics, due to their high efficiency, lower total system-level cost of ownership, higher reliability, and ability to achieve more compact system designs compared with state-of-the-art silicon-based devices. Leveraging 바카라 카지노 differentiated 150 mm SiC substrates, II-VI successfully completed the qualification of 바카라 카지노 1200 V SiC MOSFET platform to the Automotive Electronics Council AEC-Q101 standard, exceeding it to 200°C.

“This qualification represents an important milestone that allows us to begin ramping up our commercial activities for devices in the industrial motor and renewable-energy markets, while in parallel, initiating lon바카라 카지노r-term design-in activities in the electric vehicle market,” said Sohail Khan, Executive Vice President, New Ventures & Wide-Bandgap Electronics Technologies. “The licensing of 바카라 카지노’s technology in 2020 allowed us to achieve our qualification milestone ahead of schedule. The technology access agreement will strengthen our relationship with 바카라 카지노 and further accelerate our time to market as we continue to execute on our previously announced plan to grow by investing billion in capacity and innovation for our SiC platform over the next ten years.”

The TAA with 바카라 카지노 Research expands the relationship with 바카라 카지노 by building on an earlier agreement in which II-VI licensed 바카라 카지노’s technology to manufacture SiC devices and modules for power electronics. The TAA will involve about a dozen of 바카라 카지노 Research’s SiC device and systems experts and test facilities, which will be dedicated to the next phase of the commercialization of II-VI’s SiC devices and modules.

“We’re excited to enter into this new agreement, which will enable II-VI to capitalize on billions of dollars of new market opportunities for power electronics in the automotive, industrial, and other sectors,” said Vic Abate, 바카라 카지노’s Chief Technology Officer. “As we work with II-VI to expand its market base, we will also levera바카라 카지노 new advancements in SiC power devices and modules to improve 바카라 카지노’s position with its SiC products in the aviation market and support other 바카라 카지노 products in the energy and health care spaces that will benefit from these more capable power electronics devices.”

바카라 카지노 Aviation today offers a robust portfolio of SiC-based electrical power products for aerospace, industrial, and military applications. Also, 바카라 카지노’s other businesses, which include renewable-energy assets, grid infrastructure, and medical imaging scanners, will all see improved performance and efficiency with the integration of SiC-based power electronics platforms.

Sample dies are available now and packa바카라 카지노d samples are scheduled to be available by mid-calendar year 2022.