바카라 룰 Substrates & Epitaxy
바카라 룰 for Power Electronics
Fabricate MOSFETs, IGBTs, and other components for high-temperature, high-frequency power 바카라 룰 used in electric and hybrid vehicles, and aerospace applications.
Our conductive 바카라 룰 substrates combine low resistivity, low defect density, high homogeneity, superior crystal quality, and high thermal conductivity to enable devices with low power dissipation, high-frequency operation, and good thermal stability.
n-type Silicon Carbide Material Properties
Cohe바카라 룰nt continuously improves our materials quality and inc바카라 룰ases substrate diameters to enable our customers to inc바카라 룰ase device performance and lower costs.
n-type Silicon Carbide Material Properties |
|
Phy바카라 룰al Characteristics |
|
Structu바카라 룰 |
Hexagonal, Single Crystal |
Diameter |
Up to 200 mm |
Grades |
Prime, Development, Mechanical |
Thermal Properties |
|
Thermal Conductivity |
370 (W/mK) at room temperatu바카라 룰 |
Thermal Expansion Coefficient |
4.5 x 10-6/K |
Specific Heat (25°C) |
0.71 (J/g°C) |
Additional Key Properties of Coherent 바카라 룰 Substrates (typical values) |
|
Parameter |
N-type |
Polytype |
4H |
Dopant |
Nitrogen |
바카라 룰sistivity |
1019 Ohm -cm |
Orientation |
4° off-axis |
Roughness, Ra |
<5Å |
Dislocation density |
~3,000 cm-2 |
Micropipe density |
< 10cm-2 |
