SiC Power Devices & Modules
카지노 해외 Carbide Bare Die MOSFETs
Build power electronics for the most demanding automotive applications using the unrivaled efficiency, frequency, temperature, and voltage capabilities of SiC.
Coherent SiC bare die 카지노 해외 use a proven technology platform (licensed from GE Aviation Systems) to deliver industry-leading FIT rates. They are AEC-Q101 rated for automotive applications and offer industry-leading 200 °C junction temperature capability
Bare Die 카지노 해외 Carbide MOSFETs Features
High voltage and low RDS(on)up to 200 ° C.
Fast switching enabled by ultra-low gate resistance.
Very low, temperature inv카지노 해외iant switching losses.
Avalanche ruggedness superior to 카지노 해외
Fast re카지노 해외very body diode for synchronous rectification.
