SiC Power Devices & 꽁 머니 카지노 3 만
Silicon Carbide Power 꽁 머니 카지노 3 만
Take full advantage of the unique performance capabilities of SiC power electronics with our broad range of 꽁 머니 카지노 3 만 in industry standard and optimized footprints.
Improved system efficiency, performance, and reliability. Adaptable to higher temperatures and more challenging environments. Lowers cooling requirements, reducing overall system cost and complexity. Operates effectively in topologies with continuous hard commutation. Enhances 꽁 머니 카지노 3 만 density and supports bidirectional topologies.
Silicon Carbide 꽁 머니 카지노 3 만 Module Features
Highly reliable SiC MOSFET devices
Low RDS(on)(2.9 mΩ ~ 60 mΩ – device only)
Low stray inductance
SiC die qualified to 200 ° C
Ultra-low switching losses over entire operating range
Body diode with minimal reverse re꽁 머니 카지노 3 만very
Dedicated Source- Kelvin Pin
Si3N4 AMB Substrate available
